The operation of metalorganic bubblers at reduced pressureHERSEE, S. D; BALLINGALL, J. M.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1990, Vol 8, Num 2, pp 800-804, issn 0734-2101Article

Basic studies of gallium nitride growth on sapphire by metalorganic chemical vapor deposition and optical properties of deposited layersNIEBUHR, R; BACHEM, K; DOMBROWSKI, K et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1531-1534, issn 0361-5235Conference Paper

Defect structures in silicon merged epitaxial lateral overgrowthSAMAVEDAM, S. B; KVAM, E. P; KABIR, A. E et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1747-1751, issn 0361-5235Conference Paper

Large scale production of indium antimonide film for position sensors in automobile enginesWOELK, E; JÜRGENSEN, H; ROLPH, R et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1715-1718, issn 0361-5235Conference Paper

Monitoring of MOCVD reactants by UV absorptionBAUCOM, K. C; KILLEEN, K. P; MOFFAT, H. K et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1703-1706, issn 0361-5235Conference Paper

The contraction of lattice constant and the reduction of growth rate in p-InGaAs grown by organometallic vapor phase epitaxyJEONG SOO KIM; SEUNG WON LEE; HYUNG MUN KIM et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1697-1701, issn 0361-5235Conference Paper

Effects of deposition rate on the size of self-assembled InP islands formed on GaInP/GaAs (100) surfacesREAVES, C. M; BRESSLER-HILL, V; WEINBERG, W. H et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1605-1609, issn 0361-5235Conference Paper

Evidence for reductive elimination of H₂ in the decomposition of primary arsinesFOSTER, D. F; GLIDEWELL, C; WOOLLEY, G. R et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1731-1738, issn 0361-5235Conference Paper

Growth of GaInP/GaAsP short period superlattices by flow modulation organometallic vapor phase epitaxyWHITTINGHAM, K. L; EMERSON, D. T; SHEALY, J. R et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1611-1615, issn 0361-5235Conference Paper

Maskless selective area growth of InP on sub-μm V-groove patterned Si(001)SCHNABEL, R. F; KROST, A; GRUNDMANN, M et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1625-1629, issn 0361-5235Conference Paper

Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaNKELLER, B. P; KELLER, S; DENBAARS, S. P et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1707-1709, issn 0361-5235Conference Paper

Metalorganic vapor phase epitaxial growth of GaInAsP/GaAsKNAUER, A; ERBERT, G; GRAMLICH, S et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1655-1658, issn 0361-5235Conference Paper

Microstructural study of the effect of an excess of Y₂BaCuO₅ and BaSnO₃ doping on the texturing process of YBa₂Cu₃O_7-x bulk superconductorsDELAMARE, M. P; MONOT, I; WANG, J et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1739-1745, issn 0361-5235Conference Paper

The effect of organometallic vapor phase epitaxial growth conditions of Wurtzite GaN electron transport propertiesGASKILL, D. K; WICKENDEN, A. E; DOVERSPIKE, K et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1525-1530, issn 0361-5235Conference Paper

Thermodynamic modeling of As and P incorporation in Ga_xIn_1-xP_yAs_1-y epitaxial layers grown by organometallic vapor phase epitaxyJORDAN, A. S.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1649-1654, issn 0361-5235Conference Paper

Transport characterization in nanowires using an electrical nanoprobeTALIN, A. A; LEONARD, F; KATZENMEYER, A. M et al.Semiconductor science and technology. 2010, Vol 25, Num 2, issn 0268-1242, 024015.1-024015.9Article

Electronic transport in nanowires: from injection-limited to space-charge-limited behaviorLEONARD, F; TALIN, A. A; KATZENMEYER, A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7406, issn 0277-786X, isbn 978-0-8194-7696-8 0-8194-7696-X, 1Vol, 74060G.1-74060G.13Conference Paper

Orientation-dependent nucleation of GaN on a nanoscale faceted Si surfaceLEE, S. C; SUN, X. Y; HERSEE, S. D et al.Journal of crystal growth. 2005, Vol 279, Num 3-4, pp 289-292, issn 0022-0248, 4 p.Article

Chemical vapor deposition of B₁₂As₂ thin films on 6H-SiCWANG, R. H; ZUBIA, D; O'NEIL, T et al.Journal of electronic materials. 2000, Vol 29, Num 11, pp 1304-1306, issn 0361-5235Article

A new buffer layer for MOCVD growth of GaN on sapphireLI, X; FORBES, D. V; GU, S. Q et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1711-1714, issn 0361-5235Conference Paper

Growth of Ga_xIn_1-xAs_1-ySb_y alloys by metalorganic chemical vapor depositionLI SHUWEI; JIN YIXIN; ZHOU TIANMING et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1667-1670, issn 0361-5235Conference Paper

Growth, characterization, and modeling of ternary InGaAs-GaAs quatum wells by selective-area metalorganic chemical vapor depositionJONES, A. M; OSOWSKI, M. L; LAMMERT, R. M et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1631-1636, issn 0361-5235Conference Paper

Semi-insulating selective regrowth of surface light emitting diodesCHING-LONG JIANG; MASHAS, M; FERREIRA, M et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1621-1624, issn 0361-5235Conference Paper

The properties of MOVPE grown 1.3 μm DFB MQW lasers infilled with semi-insulating InP fabricated on semi-insulating substratesCARR, N; THOMPSON, J; JONES, G. G et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1617-1620, issn 0361-5235Conference Paper

The role of the V/III ratio in the growth and structural properties of metalorganic vapor phase epitaxy GaAs/Ge heterostructuresPELOSI, C; ATTOLINI, G; BOCCHI, C et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1723-1730, issn 0361-5235Conference Paper